Advanced Junction Terminal Technology of Ultra High Voltage Thyristor

Volume 10, Issue 1, February 2026     |     PP. 1-12      |     PDF (390 K)    |     Pub. Date: June 11, 2026
DOI: 10.54647/isss120432    12 Downloads     181 Views  

Author(s)

LingYi Gao, PERI power semiconductor converting technology co., LTD, Xi’an 710048, China
Shancheng Gao, PERI power semiconductor converting technology co., LTD, Xi’an 710048, China
Lai Zhang, PERI power semiconductor converting technology co., LTD, Xi’an 710048, China
Xiaobo Fan, PERI power semiconductor converting technology co., LTD, Xi’an 710048, China

Abstract
The advantages and disadvantages of traditional thyristor`s junction terminal technology are analyzed. Based on double negative angle modeling, a new technology is developed with radial variable doping and mesa shape modification. The technology minimized the chip thickness and the junction terminal structure length on chip, as well as maximized the effective conduction length of device. Three different samples of junction terminal structure technology were manufactured and tested. The results indicate that the samples using the new technology has a smaller leakage current (2.50mA) without reducing blocking voltage (≥ 8000V) and a smaller on-state voltage drop (1.782V) under flowing the same on-state current (4500 A). Moreover, reverse recovery charge, dv/dt tolerance, di/dt tolerance and turn-off time get fully optimized. The 6-inch (1inch=2.54cm) ultra-high voltage thyristor (4500A/8500V) was successfully developed, and its dynamic characteristic and parameter consistency fulfill the design and application requirement.

Keywords
junction terminal; radial variable doping; mesa shape modification; blocking voltage; on-state current capacity; on-state voltage drop

Cite this paper
LingYi Gao, Shancheng Gao, Lai Zhang, Xiaobo Fan, Advanced Junction Terminal Technology of Ultra High Voltage Thyristor , SCIREA Journal of Information Science and Systems Science. Volume 10, Issue 1, February 2026 | PP. 1-12. 10.54647/isss120432

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